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Volumn 80, Issue 15, 2009, Pages

Electron localization by a donor in the vicinity of a basal stacking fault in GaN

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EID: 71449107469     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.153309     Document Type: Article
Times cited : (34)

References (31)
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  • 9
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    • Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) and semipolar (11-22) GaN in relation to microstructural characterization
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    • Guhne, T.1    Bougrioua, Z.2    Vennegues, P.3    Leroux, M.4    Albrecht, M.5
  • 18
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    • 10.1016/0038-1098(88)90455-3
    • J.-W. Wu, Solid State Commun. 67, 911 (1988). 10.1016/0038-1098(88)90455- 3
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    • 10.1103/PhysRevB.47.15789
    • R. Zimmermann and D. Bimberg, Phys. Rev. B 47, 15789 (1993). 10.1103/PhysRevB.47.15789
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    • Zimmermann, R.1    Bimberg, D.2
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    • Growth of p-type and n-type m-plane GaN by molecular beam epitaxy
    • DOI 10.1063/1.2338602
    • M. McLaurin, T. E. Mates, F. Wu, and J. S. Speck, J. Appl. Phys. 100, 063707 (2006). 10.1063/1.2338602 (Pubitemid 44496121)
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  • 31
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    • See for instance, 10.1002/pssb.200844055
    • See for instance, J. Camassel and S. Juillaguet, Phys. Status Solidi B 245, 1337 (2008). 10.1002/pssb.200844055
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    • Camassel, J.1    Juillaguet, S.2


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