Characterization of plasma-induced damage of selectively recessed GaN/InAlN/AlN/GaN heterostructures using SiCl4 and SF6

Japanese Journal of Applied Physics

Volumn 49, Issue 11, 2010, Pages

  Ostermaier, Clemens ^a   Pozzovivo, Gianmauro ^a   Basnar, Bernhard ^a   Schrenk, Werner ^a   Carlin, Jean François ^b   Gonschorek, Marcus ^b   Grandjean, Nicolas ^b   Vincze, Andrej ^c   Tóth, Lajos ^d   Pécz, Bela ^d   Strasser, Gottfried ^a   Pogany, Dionyz ^a   Kuzmik, Jan ^a,e  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b EPFL   (Switzerland)

^c INTERNATIONAL LASER CENTER   (Slovakia)

^d RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^e INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; COMPARING DEVICES; ETCH RATES; GAN CAP LAYERS; GATE-LEAKAGE CURRENT; HETEROSTRUCTURES; PLASMA EXPOSURE; PLASMA TREATMENT; PLASMA-INDUCED DAMAGE; REQUIRED TIME; TIME DURATION;

DRAIN CURRENT; ELECTROMAGNETIC INDUCTION; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; INDUCTIVELY COUPLED PLASMA; LEAKAGE CURRENTS; PLASMA ETCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79551621206     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.116506     Document Type: Article

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