Gate-recessed InAlN/GaN HEMTs on SiC substrate with Al2 O3 passivation

IEEE Electron Device Letters

Volumn 30, Issue 9, 2009, Pages 904-906

  Chung, Jinwook W ^a   Saadat, Omair I ^a   Tirado, Jose M ^a   Gao, Xiang ^b   Guo, Shiping ^b   Palacios, Tomás ^a  

^a USA   (United States)

^b IQE INC   (United States)

Author keywords

Al2O3 passivation; GaN; Gate recess; High transconductance; High electron mobility transistor (HEMT); InAlN; SiC substrate

Indexed keywords

AL2O3 PASSIVATION; GAN; GATE RECESS; HIGH TRANSCONDUCTANCE; HIGH-ELECTRON MOBILITY TRANSISTOR (HEMT); INALN; SIC SUBSTRATE;

ALUMINUM; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; PASSIVATION; SEMICONDUCTING GALLIUM; SHEET RESISTANCE; SILICON CARBIDE; SUBSTRATES; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 69949128207     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2026718     Document Type: Article

References (10)

1. Y. F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P.M. Chavarkar, T. Wisleder, U. K. Mishra, and P. Parikh, "30-W/mm GaN HEMTs by field plate optimization," IEEE Electron Device Lett., vol. 25, no. 3, pp. 117-119, Mar. 2004.
2. T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "High-power AlGaN/GaN HEMTs for Ka-band applications," IEEE Electron Device Lett., vol. 26, no. 11, pp. 781-783, Nov. 2005.
3. J. Joh and J. A. del Alamo, "Mechanisms for electrical degradation of GaN high-electron mobility transistors," in IEDM Tech. Dig., 2006, pp. 415-418.
4. M. Faqir, G. Verzellesi, G. Meneghesso, E. Zanoni, and F. Fantini, "Investigation of high-electron-field degradation effects in AlGaN/GaN HEMTs," IEEE Trans. Electron Devices, vol. 55, no. 7, pp. 1592-1602, Jul. 2008.
5. F. Medjdoub, J. F. Carlin, C. Gaquiere, N. Grandjean, and E. Kohn, "Status of the emerging InAlN/GaN power HEMT technology," Open Elect. Electron. Eng. J., vol. 2, pp. 1-7, 2008.
6. F. Medjdoub, J. F. Carlin, M. Gonschorek, E. Feltin, M. A. Py, D. Ducatteau, C. Gaquiere, N. Grandjean, and E. Kohn, "Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices?," in IEDM Tech. Dig., 2006, pp. 927-930.
7. T. Palacios, A. Chakraborty, S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, "AlGaN/GaN high electron mobility transistors with InGaN back-barriers," IEEE Electron Device Lett., vol. 27, no. 1, pp. 13-15, Jan. 2006.
8. O. I. Saadat, J. W. Chung, E. L. Piner, and T. Palacios, "Gate-first GaN HEMT technology for high frequency and high temperature applications," in Proc. Int. Workshop Nitride Semicond., Montreux, Switzerland, Oct. 6-10, 2008.
9. J. S. Moon, S. Wu, D. Wong, I. Milosavljevic, A. Conway, P. Hashimoto, M. Hu, M. Antcliffe, and M. Micovic, "Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications," IEEE Electron Device Lett., vol. 26, no. 6, pp. 348-350, Jun. 2005.
10. F. Mieville, "Suitability of GaN HEMTs for digital electronics," M.S. thesis, MIT, Cambridge, MA, 2008.