Inductively coupled plasma reactive ion etching with SiCl4 gas for recessed gate AlGaN/GaN heterostructure field effect transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2320-2324

  Matsuura, Kazuaki ^a   Kikuta, Daigo ^a   Ao, Jin Ping ^a   Ogiya, Hiromichi ^b   Hiramoto, Michihiro ^b   Kawai, Hiroji ^c   Ohno, Yasuo ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b 33 Tanakamiya cho Takeda F   (Japan)

^c POWDEC K K   (Japan)

Author keywords

AIGaN; Damage; Etching; GaN; HFET; ICP; Recessed gate; SiCl4

Indexed keywords

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; GATE DIELECTRICS; HETEROJUNCTIONS; INDUCTIVELY COUPLED PLASMA; REACTIVE ION ETCHING;

ETCHING RATES; INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING; RECESSED GATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34547884722     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2320     Document Type: Article

References (6)

1. S. Keller, Y.-F. Wu, G. Parish, J. J. Xu, B. P. Keller, S. P. DenBaars, and U. K. Mishra: IEEE Trans. Electron Devices 48 (2001) 552.
2. Y. Ohno and M. Kuzuhara: IEEE Trans. Electron Devices 48 (2001) 517.
3. T. Egawa, G.-Y. Zhao, H. Ishikawa, M. Umeno, and T. Jimbo: IEEE Trans. Electron Devices 48 (2001) 603.
4. S. Arulkumaran, T. Egawa, L. Selvaraj, and H. Ishikawa: Jpn. J. Appl. Phys. 45 (2006) L220.
5. Y. Okamoto, Y. Ando, K. Hataya, T. Nakayama, H. Miyamoto, T. Inoue, M. Senda, K. Hirata, M. Kosaki, N. Shibata, and M. Kuzuhara: IEEE Trans. Microwave Theory Tech. 52 (2004) 2536.
6. W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, and I. Omura: IEEE Trans. Electron Devices 53 (2006) 356.