Above 500 °C Operation of InAlN/GaN HEMTs

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2009, Pages 285-286

  Maier, D ^a   Alomari, M ^a   Grandjean, N ^b   Carlin, J F ^a   Diforte Poisson, M A ^c   Dua, C ^c   Chuvilin, A ^a   Troadec, David ^d   Gaquière, Christophe ^d   Kaiser, U ^a   Delage, S ^c   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

^b EPFL   (Switzerland)

^c ALCATEL THALES III V LAB   (France)

^d UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURES; CONTINUOUS OPERATION; GAS SENSING; HIGH ROBUSTNESS; IN-VACUUM; LARGE-SIGNAL CONDITIONS; OPERATING DEVICES; PROOF OF CONCEPT; SHORT PERIODS; TEMPERATURE RANGE; THERMAL/CHEMICAL STABILITY;

GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH TEMPERATURE OPERATIONS; VACUUM;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 76549100134     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2009.5354902     Document Type: Conference Paper

References (2)

1. J. Song, W. Lu, J.S. Flynn, G.R. Brandes; "Pt-AlGaN/GaN Schottky diodes operating at 800 °C for hydrogen sensing"; Applied Physics Letters, 87 (2005), 133501-1 to -3.
2. Medjdoub, F.; Carlin, J.-F.; Gonschorek, M.; Feltin, E.; Py, M.A.; Ducatteau, D.; Gaquiere, C.; Grandjean, N.; Kohn, E., "Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices?, " Electron Devices Meeting, 2006. IEDM '06. International, vol., no., pp.1-4, 11-13 Dec. 2006.