Effect of the addition of SF6 and N2 in inductively coupled siCl4 plasma for gaN etching

Semiconductor Science and Technology

Volumn 24, Issue 7, 2009, Pages

  Oubensaid, E H ^a   Duluard, C Y ^a   Pichon, L E ^a   Pereira, J ^a   Boufnichel, M ^b   Lefaucheux, P ^a   Dussart, R ^a   Ranson, P ^a  

^a UNIVERSITÉ D'ORLÉANS   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ETCH RATES; INDUCTIVELY-COUPLED; SCANNING ELECTRON MICROSCOPE;

ETCHING; GALLIUM ALLOYS; GALLIUM NITRIDE; MASS SPECTROMETRY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM;

PLASMAS;

EID: 68949125212     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/7/075022     Document Type: Article

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