High etch rate and smooth morphology using a novel chemistry in reactive ion etching of GaN

Electrochemical and Solid-State Letters

Volumn 2, Issue 5, 1999, Pages 240-241

  Karouta, F ^a   Jacobs, B ^a   Vreugdewater, P ^a   Van Melick, N G H ^a   Schoen, O ^b   Protzmann, H ^b   Heuken, M ^b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; REACTIVE ION ETCHING; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SURFACES;

GALLIUM NITRIDE; HIGH ETCH RATE; SMOOTH MORPHOLOGY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032649282     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390797     Document Type: Article

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