Reactive ion etching of GaN with BCl3/SF6 plasmas

Materials Chemistry and Physics

Volumn 45, Issue 1, 1996, Pages 80-83

  Feng, M S ^a   Guo, J D ^a   Lu, Y M ^a   Chang, E Y ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Gallium nitride films; Plasmas; Reactive ion etching

Indexed keywords

EID: 0037981039     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/0254-0584(96)80053-8     Document Type: Article

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