Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes

Semiconductor Science and Technology

Volumn 24, Issue 7, 2009, Pages

  Green, R T ^a   Luxmoore, I J ^a   Houston, P A ^a   Ranalli, F ^a   Wang, T ^a   Parbrook, P J ^a   Uren, M J ^b   Wallis, D J ^b   Martin, T ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b QINETIQ   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HEMTS; DRY-ETCH; HETEROSTRUCTURES; LEAKAGE TESTS; PLASMA CHEMISTRIES; SURFACE LEAKAGE; SURFACE LEAKAGE CURRENTS;

HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; PLASMAS; SEMICONDUCTING GALLIUM;

GALLIUM NITRIDE;

EID: 68949105716     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/7/075020     Document Type: Article

References (16)

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