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Journal of Materials Science: Materials in Electronics

Volumn 16, Issue 7, 2005, Pages 409-413

GaN reactive ion etching using SiCl4:Ar:SF6 chemistry

(3) Sillero, E a Calle, F a Sanchez Garcia M A a

a UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; COMPOSITION EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; REACTIVE ION ETCHING; SEMICONDUCTOR GROWTH; SILICON COMPOUNDS; SULFUR COMPOUNDS; SURFACE CHEMISTRY; SURFACE ROUGHNESS;

CHAMBER PRESSURE; CONTROLLABLE SIDEWALL ANGLES; DRIVE POWER; EPITAXIAL LAYERS; GAS MIXTURE;

GALLIUM NITRIDE;

EID: 24944564555 PISSN: 09574522 EISSN: None Source Type: Journal
DOI: 10.1007/s10854-005-2306-4 Document Type: Article

Times cited : (5)

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