SCOPUS 정보 검색 플랫폼

Volumn 20, Issue 2, 2011, Pages 145-152

Thick boron doped diamond single crystals for high power electronics

(12) Achard, J a Silva, F a Issaoui, R a Brinza, O a Tallaire, A a Schneider, H b Isoird, K b Ding, H b Kone S b Pinault, M A c Jomard, F c Gicquel, A a

a UNIVERSITÉ PARIS 13 (France)

b UNIVERSITÉ DE TOULOUSE (France)

c LABORATOIRE DES SCIENCES DU CLIMAT ET DE L ENVIRONNEMENT (France)

Author keywords

Boron doping; Power electronic devices; Schottky diode; Single crystal diamond growth; Thick films

Indexed keywords

BORON CONCENTRATIONS; BORON DOPED DIAMOND; BORON-DOPED; BORON-DOPING; BREAKDOWN VOLTAGE; CHEMICAL VAPOUR DEPOSITION; CRITICAL ELECTRIC FIELD; DEPOSITION CONDITIONS; ELECTRIC POWER; ELECTRICAL PROPERTY; ELECTRONIC APPLICATION; HIGH GROWTH RATE; HIGH MICROWAVE; HIGH POWER ELECTRONICS; HIGH QUALITY; HIGH-QUALITY MATERIALS; PHYSICAL CHARACTERISTICS; POWER ELECTRONIC DEVICES; PROMISING MATERIALS; SCHOTTKY DIODE; SERIES RESISTANCES; SINGLE CRYSTAL DIAMOND; SINGLE CRYSTAL DIAMOND GROWTH; SWITCH-MODE POWER SUPPLIES; VERTICAL COMPONENT; WIDE-BAND-GAP SEMICONDUCTOR;

BORON; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; DIAMONDS; DISTILLATION; DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTRIC PROPERTIES; ELECTRIC SWITCHES; MATERIALS; PLASMA DEPOSITION; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SHAPE MEMORY EFFECT; THERMOELECTRIC EQUIPMENT; THICK FILMS;

SINGLE CRYSTALS;

EID: 79551512088 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/j.diamond.2010.11.014 Document Type: Article

Times cited : (72)

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