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Volumn 21, Issue 36, 2009, Pages

Microwave engineering of plasma-assisted CVD reactors for diamond deposition

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC HYDROGEN; CHEMICAL VAPOUR DEPOSITION; COUPLING EFFICIENCY; COUPLING SYSTEMS; CVD DIAMOND; CVD REACTORS; DIAMOND DEPOSITION; ELECTROMAGNETIC SIMULATION; FILM PURITY; HIGH DENSITY PLASMAS; HIGH ELECTRIC FIELDS; HIGH MICROWAVE; HIGH POWER DENSITY; HIGH POWER ELECTRONICS; HIGH PURITY; HOMOGENEOUS FILMS; INDUSTRIAL USE; INPUT POWER; LOWER FREQUENCIES; MICROWAVE ENGINEERING; MICROWAVE PLASMA; MODELLING TOOLS; OPERATING PRINCIPLES; PLASMA LOADS; PLASMA REACTORS; RAPID GROWTH; REACTOR DESIGNS; REACTOR WALLS; RESONANT CAVITY; SCALING-UP;

EID: 70349599592     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/36/364202     Document Type: Article
Times cited : (137)

References (29)
  • 17
  • 23
    • 70349596744 scopus 로고    scopus 로고
    • Spitzl R 2001 Patent Specification 6.198.224
    • (2001)
    • Spitzl, R.1
  • 29
    • 70349593638 scopus 로고    scopus 로고
    • Plassys http://www.plassys.com/


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.