Characterization of leakage current on diamond Schottky barrier diodes using thermionic-field emission modeling

Diamond and Related Materials

Volumn 15, Issue 11-12 SPEC. ISS., 2006, Pages 1949-1953

  Umezawa, Hitoshi ^a   Tokuda, Norio ^a   Ogura, Masahiko ^a   Ri, Sung Gi ^a   Shikata, Shin ichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Defect; Diamond; Reverse leakage current; Schottky barrier diode; Thermionic field emission current

Indexed keywords

CRYSTALLINE MATERIALS; CURRENT DENSITY; DIAMONDS; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; FIELD EMISSION CATHODES; GRAIN BOUNDARIES; SCHOTTKY BARRIER DIODES;

REVERSE LEAKAGE CURRENT; SHUNT PATHS; THERMIONIC FIELD EMISSION (TFE);

LEAKAGE CURRENTS;

EID: 33751166792     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2006.08.030     Document Type: Article

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