Vertical structure Schottky barrier diode fabrication using insulating diamond substrate

Diamond and Related Materials

Volumn 19, Issue 10, 2010, Pages 1324-1329

  Kumaresan, R ^a   Umezawa, H ^a   Shikata, S ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Device processing; Diamond Schottky barrier diode; Fabrication and analysis; High current capability; ICP etching; Vertical structure

Indexed keywords

BARRIER HEIGHTS; BREAKDOWN FIELD; DEVICE PROCESSING; DIAMOND SUBSTRATES; ELECTRICAL CHARACTERISTIC; FORWARD CURRENTS; HIGH CURRENTS; ICP ETCHING; IDEALITY FACTORS; ON-RESISTANCE; OXIDIZED SURFACES; REVERSE BLOCKING; ROOM TEMPERATURE; SCHOTTKY CONTACTS; SMALL SIZE; STANDARD DEVIATION; VERTICAL STRUCTURES; VERTICAL-TYPE;

DIAMONDS; DIODES; ELECTROMAGNETIC INDUCTION; FABRICATION; HIGH TEMPERATURE OPERATIONS; INDUCTIVELY COUPLED PLASMA; OHMIC CONTACTS; PLASMA ETCHING;

SCHOTTKY BARRIER DIODES;

EID: 77956059610     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2010.06.019     Document Type: Article

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