Characterisation of high-quality thick single-crystal diamond grown by CVD with a low nitrogen addition

Diamond and Related Materials

Volumn 15, Issue 10, 2006, Pages 1700-1707

  Tallaire, A ^a   Collins, A T ^b   Charles, D ^b   Achard, J ^a   Sussmann, R ^a,b   Gicquel, A ^a   Newton, M E ^c   Edmonds, A M ^c   Cruddace, R J ^c  

^a UNIVERSITÉ PARIS 13   (France)

^b KING'S COLLEGE LONDON   (United Kingdom)

^c UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

Homoepitaxy; Impurity characterisation; Optical properties characterisation; Single crystal growth

Indexed keywords

CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; EPITAXIAL GROWTH; NITROGEN; PHOTOLUMINESCENCE; SINGLE CRYSTALS;

DEFECT CONCENTRATIONS; HOMOEPITAXY; IMPURITY CHARACTERISATION; SINGLE CRYSTAL GROWTH;

DIAMONDS;

EID: 33748919422     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2006.02.005     Document Type: Article

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