Diamond junction FETs based on δ-doped channels

Diamond and Related Materials

Volumn 8, Issue 2-5, 1999, Pages 941-945

  Aleksov, A ^a   Vescan, A ^b   Kunze, M ^a   Gluche, P ^a   Ebert, W ^a   Kohn, E ^a   Bergmeier, A ^b   Dollinger, G ^b  

^a UNIVERSITY OF ULM   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

Diamond; Junction FET; Thermal activation; doping

Indexed keywords

BORON; CURRENT DENSITY; EXTRAPOLATION; FIELD EFFECT TRANSISTORS; HIGH TEMPERATURE EFFECTS; NITROGEN; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SYNTHETIC DIAMONDS;

DIAMOND JUNCTION FIELD EFFECT TRANSISTORS; THERMAL ACTIVATION;

DIAMOND FILMS;

EID: 0032607126     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(98)00393-8     Document Type: Article

References (12)

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