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Volumn 284, Issue 3-4, 2005, Pages 396-405

The control of growth parameters in the synthesis of high-quality single crystalline diamond by CVD

Author keywords

A1. Growth rate; A2. Chemical vapour deposition; A2. Homoepitaxial growth; B1. Diamond

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CONTAMINATION; DIFFRACTION; ELECTRIC REACTORS; NITROGEN; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SINGLE CRYSTALS; SURFACES; SYNTHESIS (CHEMICAL);

EID: 26044452049     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.07.046     Document Type: Article
Times cited : (117)

References (33)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.