High-temperature stability of Au/p-type diamond Schottky diode

Physica Status Solidi - Rapid Research Letters

Volumn 3, Issue 6, 2009, Pages 211-213

  Teraji, Tokuyuki ^a   Koide, Yasuo ^a   Ito, Toshimichi ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMOND SINGLE CRYSTALS; HIGH TEMPERATURE HEATING; HIGH TEMPERATURE STABILITY; IDEALITY FACTORS; MEAN VALUES; OXYGEN TERMINATION; P-TYPE; RECTIFICATION PROPERTIES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; VACUUM ULTRAVIOLETS;

DIODES; DISSOLUTION; OXYGEN; SINGLE CRYSTALS;

SCHOTTKY BARRIER DIODES;

EID: 71149090133     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200903151     Document Type: Article

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