High-quality boron-doped homoepitaxial diamond grown by high-power microwave-plasma chemical-vapor deposition

Journal of Applied Physics

Volumn 96, Issue 10, 2004, Pages 5906-5908

  Teraji, Tokuyuki ^a   Arima, Kazuya ^a   Wada, Hideki ^a   Ito, Toshimichi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CARRIER CONCENTRATION; CRYSTAL GROWTH; DOPING (ADDITIVES); FILM GROWTH; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY;

GROWTH RATE; HIGH-QUALITY FILMS; ROOM-TEMPERATURE (RT);

DIAMOND FILMS;

EID: 9944238905     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1805180     Document Type: Article

References (12)

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