Surface roughening of diamond (001) films during homoepitaxial growth in heavy boron doping

Diamond and Related Materials

Volumn 16, Issue 4-7 SPEC. ISS., 2007, Pages 767-770

  Tokuda, Norio ^a,b   Umezawa, Hitoshi ^a   Saito, Takeyasu ^a   Yamabe, Kikuo ^c   Okushi, Hideyo ^a,b   Yamasaki, Satoshi ^a,b,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

AFM; Boron doping; Homoepitaxy; Morphology; Surface

Indexed keywords

ATOMIC FORCE MICROSCOPY; BORON; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS;

BORON-DOPED DIAMOND; GAS PHASE; HOMOEPITAXIAL DIAMOND GROWTH;

DIAMOND FILMS;

EID: 34047257672     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2006.12.024     Document Type: Article

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