Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers

Diamond and Related Materials

Volumn 13, Issue 11-12, 2004, Pages 2037-2040

  Suzuki, Mariko ^a   Koizumi, Satoshi ^b   Katagiri, Masayuki ^c   Yoshida, Hiroaki ^a   Sakuma, Naoshi ^a   Ono, Tomio ^a   Sakai, Tadashi ^a  

^a TOSHIBA CORPORATION   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Diamond film; Electrical properties characterization; Homoepitaxy; N type doping

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); FREQUENCY MODULATION; IONIZATION; PHOSPHORUS; SCHOTTKY BARRIER DIODES; SULFURIC ACID;

ELECTRICAL CHARACTERIZATION; FREQUENCY-DEPENDENT MEASUREMENTS; P-DOPED HOMOEPITAXIAL DIAMOND LAYERS;

DIAMOND FILMS;

EID: 7544242342     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.06.022     Document Type: Conference Paper

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