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Physica Status Solidi (A) Applied Research

Volumn 201, Issue 11, 2004, Pages 2419-2424

Oxygen plasma pre-treatments for high quality homoepitaxial CVD diamond deposition

(6) Tallaire, A a Achard, J a Silva, F a Sussmann, R S a,b Gicquel, A a Rzepka, E c

a UNIVERSITÉ PARIS 13 (France)

b KING'S COLLEGE LONDON (United Kingdom)

c Centre National de la Recherche Scientifique (France)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH RATE; HOMOEPITAXIAL DEPOSITION; STEP-FLOW GROWTH;

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; ETCHING; OXYGEN; PHOTOLUMINESCENCE; PLASMAS; RAMAN SCATTERING; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL);

DIAMONDS;

EID: 5544242385 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/pssa.200405164 Document Type: Conference Paper

Times cited : (103)

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