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Volumn 71, Issue 2, 1997, Pages 252-254

Observation of multiple defect states at silicon-silicon nitride interfaces fabricated by low-frequency plasma-enhanced chemical vapor deposition

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000962572     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119512     Document Type: Article
Times cited : (55)

References (20)
  • 1
    • 0345044258 scopus 로고
    • edited by A. B. Bibyk, V. J. Kapoor, and N. S. Alvi (The Electrochem. Soc., Pennington, NJ)
    • E. H. Nicollian, Silicon Nitride and Silicon Dioxide Thin Insulating Films, edited by A. B. Bibyk, V. J. Kapoor, and N. S. Alvi (The Electrochem. Soc., Pennington, NJ, 1989), p. 177.
    • (1989) Silicon Nitride and Silicon Dioxide Thin Insulating Films , pp. 177
    • Nicollian, E.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.