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Volumn 40, Issue 20, 2007, Pages 6355-6385

Wide gap semiconductor microwave devices

Author keywords

[No Author keywords available]

Indexed keywords

DIAMOND LIKE CARBON FILMS; DIAMONDS; GALLIUM NITRIDE; MICROWAVE DEVICES;

EID: 36048960697     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/20/S18     Document Type: Article
Times cited : (74)

References (219)
  • 23
    • 0036568312 scopus 로고    scopus 로고
    • A review of SiC static induction transistor development for high-frequency power amplifiers
    • Sung Y M, Casady J B, Dufrene J B and Agarwal A K 2002 A review of SiC static induction transistor development for high-frequency power amplifiers Solid-State Electron. 46 605-13
    • (2002) Solid-State Electron. , vol.46 , Issue.5 , pp. 605-613
    • Sung, Y.M.1    Casady, J.B.2    Dufrene, J.B.3    Agarwal, A.K.4
  • 24
  • 29
    • 33745820878 scopus 로고    scopus 로고
    • Breaking the theoretical limit of SiC unipolar power device-a simulation study
    • Yu L C and Sheng K 2006 Breaking the theoretical limit of SiC unipolar power device-a simulation study Solid-State Electron. 50 1062-72
    • (2006) Solid-State Electron. , vol.50 , Issue.6 , pp. 1062-1072
    • Yu, L.C.1    Sheng, K.2
  • 67
    • 0034140059 scopus 로고    scopus 로고
    • GaN/SiC heterojunction bipolar transistors
    • William J et al 2000 GaN/SiC heterojunction bipolar transistors Solid-State Electron. 44 259-64
    • (2000) Solid-State Electron. , vol.44 , Issue.2 , pp. 259-264
    • William, J.1    Al, E.2
  • 162


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.