Modeling of the subthreshold current and subthreshold swing of fully depleted short-channel Si-SOI-MESFETs

Solid-State Electronics

Volumn 53, Issue 1, 2009, Pages 57-62

  Jit, S ^a   Pandey, Prashant Kumar ^a   Tiwari, Pramod Kumar ^a  

^a BANARAS HINDU UNIVERSITY   (India)

Author keywords

Short channel effect; SOI MESFET; Subthreshold current; Subthreshold swing; Threshold voltage

Indexed keywords

DISTRIBUTION FUNCTIONS; DRAIN CURRENT; MESFET DEVICES; PROBABILITY DENSITY FUNCTION; SILICON;

DEVICE SIMULATIONS; EMPIRICAL CONSTANTS; EXPONENTIAL FUNCTIONS; FULLY DEPLETED; MESFETS; POTENTIAL DISTRIBUTIONS; SHORT-CHANNEL EFFECT; SHORT-CHANNEL EFFECTS; SIMULATION RESULTS; SOI-MESFET; SOURCE AND DRAINS; SOURCE VOLTAGES; SUBTHRESHOLD CURRENT; SUBTHRESHOLD CURRENT MODELS; SUBTHRESHOLD CURRENTS; SUBTHRESHOLD SWING; SUBTHRESHOLD SWINGS;

MOSFET DEVICES;

EID: 57449111649     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.09.013     Document Type: Article

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