Donor-like defects in ZnO substrate materials and ZnO thin films

Applied Physics A: Materials Science and Processing

Volumn 88, Issue 1, 2007, Pages 135-139

  Von Wenckstern, H ^a   Brandt, M ^a   Schmidt, H ^a   Biehne, G ^a   Pickenhain, R ^a   Hochmuth, H ^a   Lorenz, M ^a   Grundmann, M ^a  

^a Inst Experimentelle Physik II   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; EPITAXIAL GROWTH; HALL EFFECT; SUBSTRATES; THIN FILMS; ZINC OXIDE;

CONTACT CONFIGURATION; DEFECT PARAMETERS; DONOR-LIKE DEFECTS;

CRYSTAL DEFECTS;

EID: 34248545192     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-007-3966-0     Document Type: Article

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