ZnO metal-semiconductor field-effect transistors with Ag-Schottky gates

Applied Physics Letters

Volumn 92, Issue 19, 2008, Pages

  Frenzel, H ^a   Lajn, A ^a   Brandt, M ^a   Von Wenckstern, H ^a   Biehne, G ^a   Hochmuth, H ^a   Lorenz, M ^a   Grundmann, M ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; PULSED LASER DEPOSITION; SAPPHIRE; SCHOTTKY BARRIER DIODES; SPUTTERING; VOLTAGE CONTROL; ZINC OXIDE;

CHANNEL MOBILITIES; REACTIVE DC SPUTTERING; THIN-FILM CHANNELS; VOLTAGE RANGE;

MESFET DEVICES;

EID: 44049083453     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2926684     Document Type: Article

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