ZnO nanorods for electronic and photonic device applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6003, Issue , 2005, Pages

  Yi, Gyu Chul ^a   Yoo, Jinkyoung ^a   Park, Won Il ^a   Jung, Sug Woo ^a   An, Sung Jin ^a   Kim, H J ^a   Kim, D W ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Field effect transistor; Heterostructures; Light emitting devices; Nanorods; Quantum structures; ZnO

Indexed keywords

ELECTRONIC EQUIPMENT; HETEROJUNCTIONS; LIGHT EMITTING DIODES; MESFET DEVICES; METALLORGANIC VAPOR PHASE EPITAXY; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; PHOTONS; QUANTUM THEORY; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

LIGHT EMITTING DEVICES; NANORODS; QUANTUM STRUCTURES; ZNO;

ZINC OXIDE;

EID: 33644640849     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.637952     Document Type: Conference Paper

References (25)

1. G.-C. Yi, C. Wang, and W. I. Park, Semicond. Sci. Technol. 20, S22 (2005).
2. C. M. Lieber, MRS Bull. 28, 486 (2003).
3. Y. Wu, H. Yan, and P. Yang, Topics in Catalysis 19, 197 (2002).
4. F. Patolsky and C. M. Lieber, Materials Today 8, 20 (2005).
5. R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964).
6. M. S. Gudiksen, J. Wang, and C. M. Lieber, J. Phys. Chem. B 105, 4062 (2001).
7. M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, Science 292, 1897 (2001).
8. B. J. Ohlsson, M. T. Björk, A. I. Persson, C. Thelander, L. R. Wallenberg, M. H. Magnusson, K. Deppert, and L. Samuelson, Physica E 13, 1126 (2002).
9. Y. Wu, R. Fan, and P. Yang, Nano Lett. 2, 83 (2002).
10. W. I. Park, D. H. Kim, S.-W. Jung, and G.-C. Yi, Appl. Phys. Lett. 80, 4232 (2002).
11. W. I. Park, J. Yoo, and G.-C. Yi, J. Kor. Phys. Soc. 46, L1067 (2005).
12. W. I. Park, G.-C. Yi, and H. M. Jang, Appl. Phys. Lett. 79, 2022 (2001).
13. S. J. An, W. I. Park, and G.-C. Yi, Appl. Phys. Lett. 84, 3612 (2004).
14. S.-W. Jung, W.I.Park, H.-D. Cheong, G.-C. Yi, H.M. Jang, S.Hong, and T. Joo, Appl. Phys. Lett. 80, 1924 (2002).
15. S. Y. Kim, H. W. Jang, J. K. Kim, C. M. Jeon, W. I. Park, G.-C. Yi, and J.-L. Lee, J. Electron. Mater. 31, 868 (2002).
16. W. I. Park, Y. H. Jun, S. W. Jung, and G.-C. Yi, Appl. Phys. Lett. 82, 964 (2003)
17. W. I. Park, G.-C. Yi, M. Kim, and S. J. Pennycook, Adv. Mater. 15, 526 (2003).
18. W. I. Park, S. W. Jung, G.-C. Yi, S. H. Oh, C. G. Park, and M. Kim, Jpn. J. Appl. Phys. 41, L1206 (2002).
19. W. I. Park, G.-C. Yi, J.-W. Kim, and S. M. Park, Appl. Phys. Lett. 82, 4358 (2003).
20. S. W. Jung, W. I. Park, M. Y. Kim, and G.-C. Yi, Adv. Mater. 15, 1358 (2003).
21. W. I. Park, J. S. Kim, G.-C. Yi, M. H. Bae, and H.-J. Lee, Appl. Phys. Lett. 85, 5052 (2004).
22. W. I. Park, J. S. Kim, G.-C. Yi, and H.-J. Lee, Adv. Mater. 17, 1393 (2005)
23. W. I. Park and G.-C. Yi, Adv. Mater. 16, 87 (2004).
24. T. Nakayama and M. Murayama, J. Cryst. Growth 214, 299 (2000).
25. S. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley, New York (1981).