ZnO nanorods for electronic nanodevice applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6122, Issue , 2006, Pages

  Park, Won Il ^a,b   Yoo, J ^a   Kim, H J ^a   Lee, C H ^a   Yi, Gyu Chul ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b HARVARD UNIVERSITY   (United States)

Author keywords

Logic circuits; Metal oxide field effect transistor; Metal semiconductor field effect transistor; Nanorods; Schottky diode; ZnO

Indexed keywords

ELECTRON MOBILITY; ETCHING; LOGIC CIRCUITS; MOSFET DEVICES; SEMICONDUCTOR DIODES; THIN FILMS; ZINC OXIDE;

NANODEVICES; NANORODS; POLYMER THIN FILMS; SCHOTTKY DIODES;

NANOSTRUCTURED MATERIALS;

EID: 33646748854     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.659650     Document Type: Conference Paper

References (44)

1. G.-C. Yi, C. Wang, and W. I. Park, Semicond. Sci. Technol. 20, S22 (2005).
2. C. M. Lieber, MRS Bull. 28, 486 (2003).
3. Y. Wu, H. Yan, and P. Yang, Topics in Catalysis 19, 197 (2002).
4. F. Patolsky and C. M. Lieber, Materials Today 8, 20 (2005).
5. M. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, Science 292, 1897 (2001).
6. W. I. Park, D. H. Kim, S. W. Jung, and G.-C. Yi, Appl. Phys. Lett. 80, 4232 (2002).
7. W. I. Park, G.-C. Yi, M. Kim, and S. J. Pennycook, Adv. Mater. 15, 526 (2003).
8. H. Kind, H. Yan, B. Messer, M. Law, and P. Yang, Adv. Mater. 14, 158 (2002).
9. W. I. Park, G.-C. Yi, J.-W. Kim, and S. M. Park, Appl. Phys. Lett. 82, 4358 (2003)
10. W. I. Park, and G.-C. Yi, Adv. Mater. 16, 87 (2004).
11. M. S. Arnold, P. Avouris, Z. W. Pan, and Z. L. Wang, J. Phys. Chem. B 107, 659 (2003).
12. S. Wolf, R. N. Tauber, Silicon Processing for the VLSI Era (Lattice Press: Sunset Beach, CA, 1986; Vols. 1, 2) Ch. 8.
13. M. Liu and H. K. Kim, Appl. Phys. Lett. 84, 173 (2004).
14. L. Lagowski, E. S. Sproles, Jr., and H. C. Gatos, J. Appl. Phys. 48, 3566 (1977).
15. S. Y. Kim, H. W. Jang, J. K. Kim, C. M. Jeon, W. I. Park, G.-C. Yi, and J.-L. Lee, J. Electron. Mater. 31, 868 (2002).
16. T.B. Hook, IEEE Trans. Electron Devices 37, 1714 (1990).
17. J. Masum, P. Parmiter, T.J. Hall, M. Crouch, IEEE Proc.-Circuits Devices Syst. 143, 307 (1996).
18. Y. Z. Xiong; G.-I. Ng; H. Wang; and J.S. Fu, IEEE Trans. Electron Devices 48, 2192 (2001).
19. W.I. Park, J.S. Kim, G.-C. Yi, M.H. Bae, and H.-J. Lee, Appl. Phys. Lett. 85, 5052 (2004).
20. W.I. Park, J.S. Kim, G.-C. Yi, and H.-J. Lee, Adv. Mater. 17, 1393 (2005).
21. Y. W. Heo, L. C. Tien, Y. Kwon, D. P. Norton, S. J. Pearton, B. S. Kang, and Ren F, Appl. Phys. Lett. 85 2274 (2004).
22. Y. Kwon,Y. Li, Y. W. Heo, M. Jones, P. H. Holloway, D. P. Norton, Z. V. Park, and S. Li, Appl. Phys. Lett. 84 2685 (2004).
23. D. Wang, Q. Wang, A. Javey, R. Tu, H. Dai, H. Kim, P. C. Mclntyre, T. Krishnamohan, and K. C. Saraswat, Appl. Phys. Lett. 83 2432 (2003).
24. S.-M. Koo, Q. Li, M. D. Edelstein, C. A. Richter, and E. M. Vogel, Nano Lett. (to be published)
25. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981) Ch. 8.
26. S. Ramo, J. R. Whinnery, and T. V. Duzer, Fields and Waves in Communication Electronics (Wiley, New York, 94) Ch. 4.
27. R. R. Hoffman, B. J. Norris, and J. F. Wager, Appl. Phys. Lett. 82, 733 (2003).
28. C. Li, D. Zhang, S. Han, X. Liu, T. Tang, and C. Zhou, Adv. Mater. 15, 143 (2003).
29. Y. Cui, Z. Zhong, D. Wang, W. U. Wang, and C. M. Lieber, Nano Lett. 3, 149 (2003).
30. Y. Huang, X. Duan, Y. Cui, and C. M. Lieber, Nano Lett. 2, 101 (2002).
31. K. Rim, J.L. Hoyt, and J.F. Gibbons, IEEE Trans. Electron Devices 47, 1406 (2000).
32. S. Rosenblatt, Y. Yaish, J. Park, J. Gore, V. Sazonova, and P. L. McEuen, Nano Lett. 2, 869 (2002).
33. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, IEEE Trans. Electron Devices 48, 560 (2001).
34. B. J. Coppa, R. F. Davis, R. J. Nemanich, Appl. Phys. Lett. 82, 400 (2003)
35. H. Sheng, S. Muthukumar, N. W. Emanetoglu, Y. Lu, Appl. Phys. Lett. 80, 2132 (2002).
36. S. M. Sze, in Physics of Semiconductor Devices, 2nd ed., Wiley, New York, Ch. 2-3 (1981).
37. R. C. Neville, C. A. Mead, J. Appl. Phys. 41, 3795 (1970).
38. G. D. J. Smit, S. Rogge, T. M. Klapwijk, Appl. Phys. Lett. 80, 2568 (2003).
39. Ph. Avouris, I.-W. Lyo, Y. Hasegawa, J. Vac. Sci. Technol. A 11, 1725 (1993).
40. J.-R. Kim, H. Oh, H. M. So, J.-J. Kim, J. Kim, C. J. Lee, S. C. Lyu, Nanotechnology 13, 701 (2002).
41. D. A. Figueredo, M. P. Zurakowski, S. S. Elliott, W. J. Anklam, S. R. Sloan, Appl. Phys. Lett. 52, 1395 (2001).
42. M. A. Khan, J. N. Kuznia, A. R. Bhattarai, D. T. Olson, Appl. Phys. Lett. 62, 1786 (1993).
43. R. Gaska, M. S. Shur, X. Hu, J. W. Yang, A. Tarakji, G. Simin, A. Khan, J. Deng, T. Werner, S. Rumyantsev, N. Pala, Appl. Phys. Lett. 78, 769 (2001).
44. P. G. Neudeck, M. S. Carpenter, M. R. Melloch, J. A. Cooper, IEEE Electron Device Lett. 12, 553 (1991).