ZnO-based metal-semiconductor field-effect transistors with Ag-, Pt-, Pd-, and Au-Schottky gates

Thin Solid Films

Volumn 518, Issue 4, 2009, Pages 1119-1123

  Frenzel, H ^a   Lajn, A ^a   von Wenckstern, H ^a   Biehne, G ^a   Hochmuth, H ^a   Grundmann, M ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

MESFET; PLD; Schottky gate; ZnO

Indexed keywords

A-PLANE SAPPHIRE; ANNEALING EFFECTS; CHANNEL MOBILITY; DC SPUTTERING; DEVICE PERFORMANCE; ELEVATED TEMPERATURE; GATE METALS; MESFETS; ORDERS OF MAGNITUDE; SCHOTTKY GATE; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; ZNO; ZNO THIN FILM;

CORUNDUM; DEPOSITION; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GOLD; ION BEAMS; LEAKAGE CURRENTS; MESFET DEVICES; PALLADIUM; PLATINUM; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

SILVER;

EID: 71649100636     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.149     Document Type: Article

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