Reliability of metal semiconductor field-effect transistor using GaN at high temperature

Journal of Applied Physics

Volumn 84, Issue 5, 1998, Pages 2940-2942

  Yoshida, Seikoh ^a   Suzuki, Joe ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001285050     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368448     Document Type: Article

References (11)

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