GaN MOS-HEMT using atomic layer deposition Al2O3 as gate dielectric and surface passivation

International Journal of High Speed Electronics and Systems

Volumn 14, Issue 3, 2004, Pages 791-796

  Ye, P D ^a   Yang, B ^a   Ng, K K ^a   Bude, J ^a   Wilk, G D ^b   Halder, S ^c   Hwang, J C M ^c  

^a AGERE SYSTEMS   (United States)

^b ASM AMERICA   (United States)

^c LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIELECTRIC MATERIALS; ELECTRON MOBILITY; LEAKAGE CURRENTS; TRANSCONDUCTANCE;

ATOMIC LAYER DEPOSITION; METAL-OXIDE-SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTOR (MOS-HEMT); SURFACE PASSIVATION;

GALLIUM NITRIDE;

EID: 24144502446     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156404002843     Document Type: Conference Paper

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