A comparison on the electrical characteristics of SiO2, SiON and SiN as the gate insulators for the fabrication of AlGaN/GaN metal-oxide/insulator-semiconductor high-electron mobility-transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 7 A, 2005, Pages 4911-4913

  Balachander, Krishnan ^a,c   Arulkumaran, Subramanium ^a   Egawa, Takashi ^a   Sano, Yoshiaki ^b   Baskar, Krishnan ^c  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b OKI ELECTRIC INDUSTRY CO   (Japan)

^c ANNA UNIVERSITY   (India)

Author keywords

AIGaN; GaN; HEMT; MISHEMT; MOSHEMT; Transconductance

Indexed keywords

ALUMINUM NITRIDE; CURRENT DENSITY; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; MOSFET DEVICES; SILICA; SILICON NITRIDE; TRANSCONDUCTANCE;

ALGAN; MISHEMT; MOSHEMT;

ELECTRIC PROPERTIES;

EID: 31544482408     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.4911     Document Type: Article

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