AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron- mobility transistor with low temperature liquid phase deposited Al 2O3 gate insulator

Journal of Applied Physics

Volumn 104, Issue 5, 2008, Pages

  Basu, Sarbani ^a   Singh, Pramod K ^a   Sze, Po Wen ^b   Wang, Yeong Her ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KAO YUAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; AUGER ELECTRON SPECTROSCOPY; CURRENT DENSITY; DIELECTRIC DEVICES; DRAIN CURRENT; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRON SPECTROSCOPY; ELECTRONS; FIELD EFFECT TRANSISTORS; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; GALLIUM ALLOYS; GATE DIELECTRICS; GATES (TRANSISTOR); HETEROJUNCTION BIPOLAR TRANSISTORS; IMAGING TECHNIQUES; INFRARED SPECTROSCOPY; IONIZATION OF GASES; LEAKAGE CURRENTS; LIQUID PHASE EPITAXY; METALS; MICROSCOPIC EXAMINATION; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; MOSFET DEVICES; OPTICAL PROJECTORS; OZONE WATER TREATMENT; PHOTOELECTRON SPECTROSCOPY; SCANNING PROBE MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS; TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

AL2 O3 FILMS; ALGAAS/INGAAS/GAAS; AUGER ELECTRONS; BREAK DOWN VOLTAGES; DEPLETION MODES; DRAIN CURRENT DENSITY; EXTRINSIC TRANSCONDUCTANCE; FOURIER TRANSFORM INFRARED; GAAS SUBSTRATES; GATE INSULATORS; GATE SWING; GATE-LEAKAGE CURRENTS; LIQUID-PHASE; LIQUID-PHASE DEPOSITION; LOW TEMPERATURE; LOW TEMPERATURES; METAL-OXIDE SEMICONDUCTORS; N -CHANNEL; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; PSEUDOMORPHIC HIGH ELECTRON-MOBILITY TRANSISTOR;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 51849135411     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2976318     Document Type: Article

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