AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor with oxidized Ni as a gate insulator

Applied Physics Letters

Volumn 85, Issue 18, 2004, Pages 4214-4216

  Oh, C S ^a   Youn, C J ^a   Yang, G M ^a   Lim, K Y ^a   Yang, J W ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; LEAKAGE CURRENTS; MOS DEVICES; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALGAN; GATE OXIDES; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (HFET); SURFACE PASSIVATION;

ELECTRIC INSULATORS;

EID: 10044257807     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1811793     Document Type: Article

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