High-power and high-efificiency GaN HEMT amplifiers

2008 IEEE Radio and Wireless Symposium, RWS

Volumn , Issue , 2008, Pages 65-68

  Joshin, Kazukiyo ^a   Kikkawa, Toshihide ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

HEMT; Millimeter wave; Power amplifiers

Indexed keywords

GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; RELIABILITY;

HEMT; HIGH POWERS; MILLIMETER WAVE; POWER AMPLIFIERS;

GALLIUM ALLOYS;

EID: 50949113709     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RWS.2008.4463429     Document Type: Conference Paper

References (12)

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