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Volumn 519, Issue 2, 2010, Pages 829-832

Origins of the temperature dependence of the series resistance, ideality factor and barrier height based on the thermionic emission model for n-type GaN Schottky diodes

(1) Lin, Yow Jon a

a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION (Taiwan)

Author keywords

Gallium nitride; Hall effect; Metal organic chemical vapor deposition; Schottky contacts; Thermionic emission

Indexed keywords

BARRIER HEIGHTS; CONDUCTION-BAND MINIMUM; EFFECTIVE DENSITY OF STATE; ENERGY DIFFERENCES; IDEALITY FACTORS; METAL ORGANIC CHEMICAL VAPOR DEPOSITION; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SERIES RESISTANCES; TEMPERATURE DEPENDENCE;

CONDUCTION BANDS; ELECTRIC CURRENTS; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; GYRATORS; HALL EFFECT; INDUSTRIAL CHEMICALS; MAGNETIC FIELD EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; TEMPERATURE DISTRIBUTION; THERMIONIC EMISSION;

SCHOTTKY BARRIER DIODES;

EID: 77958487931 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.08.103 Document Type: Article

Times cited : (13)

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