Numerical simulation of tunneling current in GaN Schottky diodes

Journal of Applied Physics

Volumn 101, Issue 10, 2007, Pages

  Osvald, J ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC CURRENT MEASUREMENT; ELECTRON TUNNELING; GALLIUM NITRIDE; THERMIONIC EMISSION;

DOPING CONCENTRATION; DRIFT-DIFFUSION APPROXIMATION; THERMIONIC CURRENT; TUNNELING CURRENT;

SCHOTTKY BARRIER DIODES;

EID: 34249881896     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2734104     Document Type: Article

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