Output power enhancement of GaN light emitting diodes with p -type ZnO hole injection layer

Applied Physics Letters

Volumn 94, Issue 10, 2009, Pages

  Kim, B J ^a   Ryu, Y R ^b   Lee, T S ^b   White, H W ^b  

^a UNIVERSITY OF MISSOURI   (United States)

^b MOXtronics Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ELECTRIC LAMPS; GALLIUM ALLOYS; GALLIUM NITRIDE; INCANDESCENT LAMPS; LIGHT EMISSION; LIGHTING; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

ACTIVE LAYERS; CLOSE PROXIMITIES; EXTERNAL QUANTUM EFFICIENCIES; GAN LEDS; GAN LIGHT-EMITTING DIODES; HIGH CURRENT DENSITIES; HIGH DRIVE CURRENTS; HIGH EFFICIENCIES; HOLE INJECTION LAYERS; HOLE-INJECTING; LIGHT BULBS; OPTICAL OUTPUT POWER; OUTPUT POWER; P-TYPE ZNO; P-TYPE ZNO LAYERS; ZNO;

LIGHT EMITTING DIODES;

EID: 62549113943     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3097243     Document Type: Article

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