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Volumn 189-190, Issue , 1998, Pages 706-710
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Electrical characterization of n-GaN Schottky and PCVD-SiO2/n-GaN interfaces
a
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Author keywords
C V; GaN; I V; Interface states; MIS; Schottky
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Indexed keywords
AUGER ELECTRON SPECTROSCOPY;
CAPACITANCE MEASUREMENT;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC CURRENT MEASUREMENT;
FERMI LEVEL;
INTERFACES (MATERIALS);
MIS DEVICES;
SEMICONDUCTING GALLIUM COMPOUNDS;
SILICA;
THERMODYNAMIC STABILITY;
VOLTAGE MEASUREMENT;
X RAY PHOTOELECTRON SPECTROSCOPY;
GALLIUM NITRIDE;
THERMIONIC EMISSION CURRENTS;
SCHOTTKY BARRIER DIODES;
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EID: 18744418002
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(98)00265-6 Document Type: Article |
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Times cited : (41)
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References (11)
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