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Journal of Applied Physics

Volumn 108, Issue 7, 2010, Pages

Metal-insulator transition characteristics of VO2 thin films grown on Ge(100) single crystals

(3) Yang, Z a Ko, C a Ramanathan, S a

a HARVARD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITIONAL VARIATION; COMPRESSIVE STRAIN; CONDUCTING STATE; ELECTRON TRANSPORT; FUNCTIONAL OXIDES; GE SUBSTRATES; GE(100); HIGH QUALITY; HIGHER-DEGREE; IDENTICAL CONDITIONS; OXIDE ELECTRONICS; RESISTANCE CHANGE; ROOM TEMPERATURE; SI(1 0 0); SWITCHING PHENOMENON; THREE ORDERS OF MAGNITUDE; TRANSITION TEMPERATURE; VARIABLE TEMPERATURE;

ACTIVATION ENERGY; DEPOSITION; GERMANIUM; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SUBSTRATES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

SINGLE CRYSTALS;

EID: 77958189002 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3492716 Document Type: Article

Times cited : (106)

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