SCOPUS 정보 검색 플랫폼

Volumn 3, Issue 6, 2010, Pages

High electron mobility Ge n-channel metal-insulator-semiconductor field-effect transistors fabricated by the gate-last process with the solid source diffusion technique

(3) Maeda, Tatsuro a Morita, Yukinori a Takagi, Shinichi b

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE STACKS; GATE-LAST; HIGH ELECTRON MOBILITY; HIGH QUALITY; METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; N-CHANNEL; ON/OFF RATIO; REVERSE CURRENTS; SOLID SOURCES; TRANSISTOR PERFORMANCE;

DIFFUSION; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GERMANIUM; ION BEAMS; METAL INSULATOR BOUNDARIES; MIS DEVICES; MISFET DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; SMELTING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77953490680 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.3.061301 Document Type: Article

Times cited : (19)

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