Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer

Journal of Applied Physics

Volumn 107, Issue 11, 2010, Pages

  Ruzmetov, Dmitry ^a   Gopalakrishnan, Gokul ^a   Ko, Changhyun ^a   Narayanamurti, Venkatesh ^a   Ramanathan, Shriram ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; CHANNEL RESISTANCE; DEVICE RESPONSE; ELECTROSTATIC CONTROL; ENGINEERED DEVICES; EXPERIMENTAL INVESTIGATIONS; FIELD EFFECTS; FIELD-EFFECT DEVICES; FILM CHARACTERISTICS; GATE OXIDE DEPOSITION; GATE OXIDE LAYERS; GATE STACKS; GATE VOLTAGES; MOTT TRANSITIONS; MULTIPLE COMPONENTS; OXIDE ELECTRONICS; OXIDE SEMICONDUCTOR; ROOM TEMPERATURE; TEMPORAL DEPENDENCE; UNIPOLAR MODULATION; VANADIUM DIOXIDE; VANADIUM OXIDES;

FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; SEMICONDUCTOR INSULATOR BOUNDARIES; THIN FILMS; VANADIUM; VANADIUM ALLOYS; VANADIUM COMPOUNDS;

METAL INSULATOR TRANSITION;

EID: 77953623513     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3408899     Document Type: Article

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