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Applied Physics Letters

Volumn 95, Issue 11, 2009, Pages

Semiconductor to metal transition characteristics of VO2 thin films grown epitaxially on Si (001)

(6) Gupta, A a Aggarwal, R a Gupta, P a Dutta, T a Narayan, Roger J a,b Narayan, J a

a North Carolina State University (United States)

b NORTH CAROLINA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DIFFRACTION STUDY; EPITAXIAL RELATIONSHIPS; HETEROSTRUCTURES; HIGHER TEMPERATURES; IN-PLANE ORIENTATION; IN-SITU; INTERMEDIATE BUFFERS; MONOCLINIC PHASE; REVERSIBLE CHANGE; SEMICONDUCTOR-TO-METAL TRANSITIONS; SI (001) SUBSTRATE; SI(0 0 1); THERMODYNAMIC MODEL; THREE ORDERS OF MAGNITUDE; TRANSITION TEMPERATURE; TRANSITION WIDTHS; UNIAXIAL STRESS; VANADIUM DIOXIDE;

SILICON; VANADIUM; YTTRIA STABILIZED ZIRCONIA; ZIRCONIA;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70349501785 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3232241 Document Type: Article

Times cited : (78)

References (15)

1
- 4244014869
- 0031-9007,. 10.1103/PhysRevLett.3.34
- F. J. Morin, Phys. Rev. Lett. 0031-9007 3, 34 (1959). 10.1103/PhysRevLett.3.34
- (1959) Phys. Rev. Lett. , vol.3 , pp. 34
- Morin, F.J.¹

2
- 0001532854
- 0022-4596,. 10.1016/0022-4596(71)90091-0
- J. B. Goodenough, J. Solid State Chem. 0022-4596 3, 490 (1971). 10.1016/0022-4596(71)90091-0
- (1971) J. Solid State Chem. , vol.3 , pp. 490
- Goodenough, J.B.¹

3
- 3242739528
- 0021-8979,. 10.1063/1.1762995
- J. Y. Suh, R. Lopez, L. C. Feldman, and R. F. Haglund, Jr., J. Appl. Phys. 0021-8979 96, 1209 (2004). 10.1063/1.1762995
- (2004) J. Appl. Phys. , vol.96 , pp. 1209
- Suh, J.Y.¹ Lopez, R.² Feldman, L.C.³ Haglund, Jr.R.F.⁴

4
- 33845214529
- Phase transition and critical issues in structure-property correlations of vanadium oxide
- DOI 10.1063/1.2384798
- J. Narayan and V. Bhosle, J. Appl. Phys. 0021-8979 100, 103524 (2006). 10.1063/1.2384798 (Pubitemid 44853669)
- (2006) Journal of Applied Physics , vol.100 , Issue.10 , pp. 103524
- Narayan, J.¹ Bhosle, V.M.²

5
- 0042281881
- 0924-4247,. 10.1016/S0924-4247(03)00233-4
- R. T. Rajendrakumar, B. Karunagaran, D. Mangalaraj, S. K. Narayandass, P. Manoravi, M. Joseph, and V. Gopal, Sens. Actuators, A 0924-4247 107, 62 (2003). 10.1016/S0924-4247(03)00233-4
- (2003) Sens. Actuators, A , vol.107 , pp. 62
- Rajendrakumar, R.T.¹ Karunagaran, B.² Mangalaraj, D.³ Narayandass, S.K.⁴ Manoravi, P.⁵ Joseph, M.⁶ Gopal, V.⁷

6
- 55249088300
- 0021-8979,. 10.1063/1.3000664
- C. Ko and S. Ramanathan, J. Appl. Phys. 0021-8979 104, 086105 (2008). 10.1063/1.3000664
- (2008) J. Appl. Phys. , vol.104 , pp. 086105
- Ko, C.¹ Ramanathan, S.²

7
- 0037246471
- 0021-8979,. 10.1063/1.1528301
- J. Narayan and B. C. Larson, J. Appl. Phys. 0021-8979 93, 278 (2003). 10.1063/1.1528301
- (2003) J. Appl. Phys. , vol.93 , pp. 278
- Narayan, J.¹ Larson, B.C.²

8
- 0006271220
- 0003-6951,. 10.1063/1.1654972
- K. N. Tu, J. F. Ziegler, and C. J. Kircher, Appl. Phys. Lett. 0003-6951 23, 493 (1973). 10.1063/1.1654972
- (1973) Appl. Phys. Lett. , vol.23 , pp. 493
- Tu, K.N.¹ Ziegler, J.F.² Kircher, C.J.³

9
- 33750799094
- 2/Si substrates
- DOI 10.1016/j.tsf.2006.03.015, PII S0040609006004433
- N. Yuan, J. Lia, G. Lib, and X. Chenc, Thin Solid Films 0040-6090 515, 1275 (2006). 10.1016/j.tsf.2006.03.015 (Pubitemid 44715993)
- (2006) Thin Solid Films , vol.515 , Issue.4 , pp. 1275-1279
- Yuan, N.¹ Li, J.² Li, G.³ Chen, X.⁴

10
- 0035281034
- Electrical properties of crystalline YSZ films on silicon as alternative gate dielectrics
- DOI 10.1088/0268-1242/16/3/101, PII S0268124201180570
- S. J. Wang, C. K. Ong, S. Y. Xu, P. Chen, W. C. Tjiu, A. C. H. Huan, W. J. Yoo, J. S. Lim, W. Feng, and W. K. Choi, Semicond. Sci. Technol. 0268-1242 16, L13 (2001). 10.1088/0268-1242/16/3/101 (Pubitemid 32259308)
- (2001) Semiconductor Science and Technology , vol.16 , Issue.3
- Wang, S.J.¹ Ong, C.K.² Xu, S.Y.³ Chen, P.⁴ Tjiu, W.C.⁵ Huan, A.C.H.⁶ Yoo, W.J.⁷ Lim, J.S.⁸ Feng, W.⁹ Choi, W.K.¹⁰

11
- 70349541240
- JCPDS file number 43-1051.
- JCPDS file number 43-1051.

12
- 58149166463
- 0003-6951,. 10.1063/1.3050529
- R. Aggarwal, C. Jin, P. Pant, J. Narayan, and R. J. Narayan, Appl. Phys. Lett. 0003-6951 93, 251905 (2008). 10.1063/1.3050529
- (2008) Appl. Phys. Lett. , vol.93 , pp. 251905
- Aggarwal, R.¹ Jin, C.² Pant, P.³ Narayan, J.⁴ Narayan, R.J.⁵

13
- 33645526328
- 0003-6951,. 10.1063/1.2001139
- D. Brassard, S. Fourmaux, M. Jean-Jacques, J. C. Kieffer, and M. A. El Khakani, Appl. Phys. Lett. 0003-6951 87, 051910 (2005). 10.1063/1.2001139
- (2005) Appl. Phys. Lett. , vol.87 , pp. 051910
- Brassard, D.¹ Fourmaux, S.² Jean-Jacques, M.³ Kieffer, J.C.⁴ El Khakani, M.A.⁵

14
- 67650514247
- 0163-1829,. 10.1103/PhysRevB.79.153107
- D. Ruzmetov, D. Heiman, B. B. Claflin, V. Narayanamurti, and S. Ramanathan, Phys. Rev. B 0163-1829 79, 153107 (2009). 10.1103/PhysRevB.79.153107
- (2009) Phys. Rev. B , vol.79 , pp. 153107
- Ruzmetov, D.¹ Heiman, D.² Claflin, B.B.³ Narayanamurti, V.⁴ Ramanathan, S.⁵

15
- 79956019110
- 2 (001) and (110) substrates
- DOI 10.1063/1.1446215
- Y. Muraoka and Z. Hiroi, Appl. Phys. Lett. 0003-6951 80, 583 (2002). 10.1063/1.1446215 (Pubitemid 34148239)
- (2002) Applied Physics Letters , vol.80 , Issue.4 , pp. 583
- Muraoka, Y.¹ Hiroi, Z.²

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