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Applied Physics Letters

Volumn 95, Issue 11, 2009, Pages

Semiconductor to metal transition characteristics of VO2 thin films grown epitaxially on Si (001)

(6) Gupta, A a Aggarwal, R a Gupta, P a Dutta, T a Narayan, Roger J a,b Narayan, J a

a North Carolina State University (United States)

b NORTH CAROLINA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DIFFRACTION STUDY; EPITAXIAL RELATIONSHIPS; HETEROSTRUCTURES; HIGHER TEMPERATURES; IN-PLANE ORIENTATION; IN-SITU; INTERMEDIATE BUFFERS; MONOCLINIC PHASE; REVERSIBLE CHANGE; SEMICONDUCTOR-TO-METAL TRANSITIONS; SI (001) SUBSTRATE; SI(0 0 1); THERMODYNAMIC MODEL; THREE ORDERS OF MAGNITUDE; TRANSITION TEMPERATURE; TRANSITION WIDTHS; UNIAXIAL STRESS; VANADIUM DIOXIDE;

SILICON; VANADIUM; YTTRIA STABILIZED ZIRCONIA; ZIRCONIA;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70349501785 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3232241 Document Type: Article

Times cited : (80)

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