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Volumn 107, Issue 6, 2010, Pages

In situ x-ray diffraction studies on epitaxial VO2 films grown on c-Al2 O3 during thermally induced insulator-metal transition

(3) Okimura, Kunio a,b Sakai, Joe c Ramanathan, Shriram b

a TOKAI UNIVERSITY (Japan)

b HARVARD UNIVERSITY (United States)

c UNIVERSITÉ DE TOURS (France)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIALLY GROWN; GAUSSIAN CURVE FITTING; HIGH TEMPERATURE; IN-SITU; IN-SITU TEMPERATURE; INSULATOR METAL TRANSITION; INSULATOR PHASE; INTERMEDIATE PHASE; MONOCLINIC PHASE; POLYCRYSTALLINE; ROOM TEMPERATURE; RUTILE PHASE; SI SUBSTRATES; STRAINED STRUCTURE; STRUCTURAL PHASE TRANSITION; TEMPERATURE RANGE; TETRAGONAL PHASE; THERMALLY INDUCED; XRD PATTERNS;

ALUMINUM; CURVE FITTING; EPITAXIAL FILMS; METAL INSULATOR BOUNDARIES; OXIDE MINERALS; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTOR INSULATOR BOUNDARIES; SUBSTRATES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

METAL INSULATOR TRANSITION;

EID: 77950587880 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3327422 Document Type: Conference Paper

Times cited : (57)

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