SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 106, Issue 3, 2009, Pages

Dispersive capacitance and conductance across the phase transition boundary in metal-vanadium oxide-silicon devices

(2) Ko, Changhyun a Ramanathan, Shriram a

a HARVARD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; DEVICE STRUCTURES; ELECTRONIC DEVICE; FREQUENCY DEPENDENCE; FREQUENCY-DEPENDENT; FUNCTIONAL OXIDES; INSULATING STATE; LOW FREQUENCY; METALLIC STATE; PHASE-TRANSITION BOUNDARY; POWER-LAW BEHAVIOR; SEMICONDUCTOR CAPACITORS; SILICON DEVICES; TUNABILITIES; VANADIUM OXIDE THIN FILMS; VANADIUM OXIDES;

CAPACITANCE; DIELECTRIC PROPERTIES; ELECTRIC POTENTIAL; ELECTRON DEVICES; INSULATION; METAL INSULATOR BOUNDARIES; OXIDE FILMS; OXIDES; SEMICONDUCTOR INSULATOR BOUNDARIES; VANADIUM; VANADIUM ALLOYS; VANADIUM COMPOUNDS;

METAL INSULATOR TRANSITION;

EID: 69149088688 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3186024 Document Type: Article

Times cited : (15)

References (45)

1
- 4244014869
- 0031-9007,. 10.1103/PhysRevLett.3.34
- F. J. Morin, Phys. Rev. Lett. 0031-9007 3, 34 (1959). 10.1103/PhysRevLett.3.34
- (1959) Phys. Rev. Lett. , vol.3 , pp. 34
- Morin, F.J.¹

2
- 2242443246
- 0031-9007,. 10.1103/PhysRevLett.17.1286
- A. S. Barker, Jr., H. W. Verleur, and H. J. Guggenheim, Phys. Rev. Lett. 0031-9007 17, 1286 (1966). 10.1103/PhysRevLett.17.1286
- (1966) Phys. Rev. Lett. , vol.17 , pp. 1286
- Barker Jr., A.S.¹ Verleur, H.W.² Guggenheim, H.J.³

3
- 0000531283
- 0038-1098,. 10.1016/0038-1098(69)90888-6
- L. A. Ladd and W. Paul, Solid State Commun. 0038-1098 7, 425 (1969). 10.1016/0038-1098(69)90888-6
- (1969) Solid State Commun. , vol.7 , pp. 425
- Ladd, L.A.¹ Paul, W.²

4
- 37349052805
- Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging
- DOI 10.1126/science.1150124
- M. M. Qazilbash, M. Brehm, B. G. Chae, P. C. Ho, G. O. Andreev, B. J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H. T. Kim, and D. N. Basov, Science 0036-8075 318, 1750 (2007). 10.1126/science.1150124 (Pubitemid 350284506)
- (2007) Science , vol.318 , Issue.5857 , pp. 1750-1753
- Qazilbash, M.M.¹ Brehm, M.² Chae, B.-G.³ Ho, P.-C.⁴ Andreev, G.O.⁵ Kim, B.-J.⁶ Yun, S.J.⁷ Balatsky, A.V.⁸ Maple, M.B.⁹ Keilmann, F.¹⁰ Kim, H.-T.¹¹ Basov, D.N.¹²

5
- 36049053404
- 0034-6861,. 10.1103/RevModPhys.40.677
- N. F. Mott, Rev. Mod. Phys. 0034-6861 40, 677 (1968). 10.1103/RevModPhys.40.677
- (1968) Rev. Mod. Phys. , vol.40 , pp. 677
- Mott, N.F.¹

6
- 0001532854
- 0022-4596,. 10.1016/0022-4596(71)90091-0
- J. B. Goodenough, J. Solid State Chem. 0022-4596 3, 490 (1971). 10.1016/0022-4596(71)90091-0
- (1971) J. Solid State Chem. , vol.3 , pp. 490
- Goodenough, J.B.¹

7
- 11244304990
- 0031-9007,. 10.1103/PhysRevLett.73.3042
- T. M. Rice, H. Launois, and J. P. Pouget, Phys. Rev. Lett. 0031-9007 73, 3042 (1994). 10.1103/PhysRevLett.73.3042
- (1994) Phys. Rev. Lett. , vol.73 , pp. 3042
- Rice, T.M.¹ Launois, H.² Pouget, J.P.³

8
- 33846443645
- Monoclinic and correlated metal phase in VO2 as evidence of the mott transition: Coherent phonon analysis
- DOI 10.1103/PhysRevLett.97.266401
- H. T. Kim, Y. W. Lee, B. J. Kim, B. G. Chae, S. J. Yun, K. Y. Kang, K. J. Han, K. J. Yee, and Y. S. Lim, Phys. Rev. Lett. 0031-9007 97, 266401 (2006). 10.1103/PhysRevLett.97.266401 (Pubitemid 46137815)
- (2006) Physical Review Letters , vol.97 , Issue.26 , pp. 266401
- Kim, H.-T.¹ Lee, Y.W.² Kim, B.-J.³ Chae, B.-G.⁴ Yun, S.J.⁵ Kang, K.-Y.⁶ Han, K.-J.⁷ Yee, K.-J.⁸ Lim, Y.-S.⁹

9
- 55249088300
- 0021-8979,. 10.1063/1.3000664
- C. Ko and S. Ramanathan, J. Appl. Phys. 0021-8979 104, 086105 (2008). 10.1063/1.3000664
- (2008) J. Appl. Phys. , vol.104 , pp. 086105
- Ko, C.¹ Ramanathan, S.²

10
- 27744597738
- 0921-4526,. 10.1016/j.physb.2005.07.032
- B. G. Chae, H. T. Kim, D. H. Youn, and K. Y. Kang, Physica B 0921-4526 369, 76 (2005). 10.1016/j.physb.2005.07.032
- (2005) Physica B , vol.369 , pp. 76
- Chae, B.G.¹ Kim, H.T.² Youn, D.H.³ Kang, K.Y.⁴

11
- 11244327770
- 2: A view from the ultrafast timescale [2]
- DOI 10.1103/PhysRevB.70.161102, 161102
- A. Cavalleri, T. Dekorsy, H. H. W. Chong, J. C. Kieffer, and R. W. Schoenlein, Phys. Rev. B 0163-1829 70, 161102 (2004). 10.1103/PhysRevB.70.161102 (Pubitemid 40100421)
- (2004) Physical Review B - Condensed Matter and Materials Physics , vol.70 , Issue.16 , pp. 1-4
- Cavalleri, A.¹ Dekorsy, Th.² Chong, H.H.W.³ Kieffer, J.C.⁴ Schoenlein, R.W.⁵

12
- 9744245252
- 0003-6951,. 10.1063/1.1808890
- L. A. L. de Almeida, G. S. Deep, A. M. N. Lima, I. A. Khrebtov, V. G. Malyarov, and H. Neff, Appl. Phys. Lett. 0003-6951 85, 3605 (2004). 10.1063/1.1808890
- (2004) Appl. Phys. Lett. , vol.85 , pp. 3605
- De Almeida, L.A.L.¹ Deep, G.S.² Lima, A.M.N.³ Khrebtov, I.A.⁴ Malyarov, V.G.⁵ Neff, H.⁶

13
- 79956010513
- x nanotube composites
- DOI 10.1063/1.1504641
- J. F. Xu, R. Czerw, S. Webster, D. L. Carroll, J. Ballato, and R. Nesper, Appl. Phys. Lett. 0003-6951 81, 1711 (2002). 10.1063/1.1504641 (Pubitemid 35037794)
- (2002) Applied Physics Letters , vol.81 , Issue.9 , pp. 1711
- Xu, J.-F.¹ Czerw, R.² Webster, S.³ Carroll, D.L.⁴ Ballato, J.⁵ Nesper, R.⁶

14
- 5444276319
- 0003-6951,. 10.1063/1.1788883
- M. Soltani, M. Chaker, E. Haddad, R. Kruzelecky, and J. Margot, Appl. Phys. Lett. 0003-6951 85, 1958 (2004). 10.1063/1.1788883
- (2004) Appl. Phys. Lett. , vol.85 , pp. 1958
- Soltani, M.¹ Chaker, M.² Haddad, E.³ Kruzelecky, R.⁴ Margot, J.⁵

15
- 36549083365
- Two series oxide resistors applicable to high speed and high density nonvolatile memory
- DOI 10.1002/adma.200700251
- M. J. Lee, Y. Park, D. S. Suh, E. H. Lee, S. Seo, D. C. Kim, R. Jung, B. S. Kang, S. E. Ahn, C. B. Lee, D. H. Seo, Y. K. Cha, I. K. Yoo, J. S. Kim, and B. H. Park, Adv. Mater. (Weinheim, Ger.) 0935-9648 19, 3919 (2007). 10.1002/adma.200700251 (Pubitemid 350190438)
- (2007) Advanced Materials , vol.19 , Issue.22 , pp. 3919-3923
- Lee, M.-J.¹ Park, Y.² Suh, D.-S.³ Lee, E.-H.⁴ Seo, S.⁵ Kim, D.-C.⁶ Jung, R.⁷ Kang, B.-S.⁸ Ahn, S.-E.⁹ Lee, C.B.¹⁰ Seo, D.H.¹¹ Cha, Y.-K.¹² Yoo, I.-K.¹³ Kim, J.-S.¹⁴ Park, B.H.¹⁵

16
- 0031332824
- 1058-4587,. 10.1080/10584589708015704
- E. Tokumitsu, T. Shimamura, and H. Ishiwara, Integr. Ferroelectr. 1058-4587 15, 137 (1997). 10.1080/10584589708015704
- (1997) Integr. Ferroelectr. , vol.15 , pp. 137
- Tokumitsu, E.¹ Shimamura, T.² Ishiwara, H.³

17
- 33947375695
- A ferroelectric associative memory technology employing heterogate FGMOS structure
- DOI 10.1109/TED.2005.856188
- D. Kobayashi, T. Shibata, Y. Fujimori, T. Nakamura, and H. Takasu, IEEE Trans. Electron Devices 0018-9383 52, 2188 (2005). 10.1109/TED.2005.856188 (Pubitemid 46446457)
- (2005) IEEE Transactions on Electron Devices , vol.52 , Issue.10 , pp. 2188-2197
- Kobayashi, D.¹ Shibata, T.² Fujimori, Y.³ Nakamura, T.⁴ Takasu, H.⁵

18
- 0028408361
- 0896-1107,. 10.1007/BF00724590
- A. M. Hermann, R. M. Yandrofski, J. F. Scott, A. Naziripour, D. Galt, J. C. Price, J. Cuchario, and R. K. Ahrenkiel, J. Supercond. 0896-1107 7, 463 (1994). 10.1007/BF00724590
- (1994) J. Supercond. , vol.7 , pp. 463
- Hermann, A.M.¹ Yandrofski, R.M.² Scott, J.F.³ Naziripour, A.⁴ Galt, D.⁵ Price, J.C.⁶ Cuchario, J.⁷ Ahrenkiel, R.K.⁸

19
- 0001212954
- 0003-6951,. 10.1063/1.125839
- J. Im, O. Auciello, P. K. Baumann, S. K. Streiffer, D. Y. Kaufman, and A. R. Krauss, Appl. Phys. Lett. 0003-6951 76, 625 (2000). 10.1063/1.125839
- (2000) Appl. Phys. Lett. , vol.76 , pp. 625
- Im, J.¹ Auciello, O.² Baumann, P.K.³ Streiffer, S.K.⁴ Kaufman, D.Y.⁵ Krauss, A.R.⁶

20
- 0034230182
- Design and development of ferroelectric tunable microwave components for K u- and K-band satellite communication systems
- DOI 10.1109/22.853458
- F. A. Miranda, G. Subramanyam, F. W. van Keuls, R. R. Romanofsky, J. D. Warner, and C. H. Mueller, IEEE Trans. Microwave Theory Tech. 0018-9480 48, 1181 (2000). 10.1109/22.853458 (Pubitemid 30902066)
- (2000) IEEE Transactions on Microwave Theory and Techniques , vol.48 , Issue.7 , pp. 1181-1189
- Miranda, F.A.¹ Subramanyam, G.² Van Keuls, F.W.³ Romanofsky, R.R.⁴ Warner, J.D.⁵ Mueller, C.H.⁶

21
- 0142026444
- 0003-6951,. 10.1063/1.1613036
- J. Lu and S. Stemmer, Appl. Phys. Lett. 0003-6951 83, 2411 (2003). 10.1063/1.1613036
- (2003) Appl. Phys. Lett. , vol.83 , pp. 2411
- Lu, J.¹ Stemmer, S.²

22
- 21444434406
- Microwave dielectric properties of tunable capacitors employing bismuth zinc niobate thin films
- DOI 10.1063/1.1883306, 084110
- J. Park, J. Lu, S. Stemmer, and R. A. York, J. Appl. Phys. 0021-8979 97, 084110 (2005). 10.1063/1.1883306 (Pubitemid 40914250)
- (2005) Journal of Applied Physics , vol.97 , Issue.8 , pp. 1-4
- Park, J.¹ Lu, J.² Stemmer, S.³ York, R.A.⁴

23
- 0035369542
- Frequency-tunable microwave dielectric resonator
- DOI 10.1109/22.925485, PII S0018948001039801
- Y. M. Poplavko, Y. V. Prokopenko, V. I. Molchanov, and A. Dogan, IEEE Trans. Microwave Theory Tech. 0018-9480 49, 1020 (2001). 10.1109/22.925485 (Pubitemid 32576609)
- (2001) IEEE Transactions on Microwave Theory and Techniques , vol.49 , Issue.6 , pp. 1020-1026
- Poplavko, Y.M.¹ Prokopenko, Y.V.² Molchanov, V.I.³ Dogan, A.⁴

24
- 0034188340
- 2 thin films and examination with MIS-elements and C-V-measurements
- DOI 10.1016/S0040-6090(00)00711-2
- H. J. Schlag and W. Scherber, Thin Solid Films 0040-6090 366, 28 (2000). 10.1016/S0040-6090(00)00711-2 (Pubitemid 30867690)
- (2000) Thin Solid Films , vol.366 , Issue.1-2 , pp. 28-31
- Schlag, H.J.¹ Scherber, W.²

25
- 0035498282
- Effect of the metal-semiconductor phase transition on the capacitance of an aluminum-dielectric-vanadium dioxide heterostructure
- DOI 10.1134/1.1424394
- A. A. Bugaev, S. E. Nikitin, and E. I. Terukov, Tech. Phys. Lett. 1063-7850 27, 924 (2001). 10.1134/1.1424394 (Pubitemid 33394068)
- (2001) Technical Physics Letters , vol.27 , Issue.11 , pp. 924-925
- Bugaev, A.A.¹ Nikitin, S.E.² Terukov, E.I.³

26
- 37249013020
- Structure-functional property relationships in rf-sputtered vanadium dioxide thin films
- DOI 10.1063/1.2817818
- D. Ruzmetov, K. T. Zawilski, V. Narayanamurti, and S. Ramanathana, J. Appl. Phys. 0021-8979 102, 113715 (2007). 10.1063/1.2817818 (Pubitemid 350262775)
- (2007) Journal of Applied Physics , vol.102 , Issue.11 , pp. 113715
- Ruzmetov, D.¹ Zawilski, K.T.² Narayanamurti, V.³ Ramanathan, S.⁴

27
- 58149149491
- 0003-6951,. 10.1063/1.3050464
- C. Ko and S. Ramanathan, Appl. Phys. Lett. 0003-6951 93, 252101 (2008). 10.1063/1.3050464
- (2008) Appl. Phys. Lett. , vol.93 , pp. 252101
- Ko, C.¹ Ramanathan, S.²

28
- 69149094196
- JCPDS Card No. 01-082-0661.
- JCPDS Card No. 01-082-0661.

29
- 69149089531
- JCPDS Card No. 00-046-1043.
- JCPDS Card No. 00-046-1043.

30
- 33645526328
- 0003-6951,. 10.1063/1.2001139
- D. Brassard, S. Fourmaux, M. Jean-Jacques, J. C. Kieffer, and M. A. E. Khakani, Appl. Phys. Lett. 0003-6951 87, 051910 (2005). 10.1063/1.2001139
- (2005) Appl. Phys. Lett. , vol.87 , pp. 051910
- Brassard, D.¹ Fourmaux, S.² Jean-Jacques, M.³ Kieffer, J.C.⁴ Khakani, M.A.E.⁵

31
- 0036612529
- 0163-1829,. 10.1103/PhysRevB.65.224113
- R. Lopez, T. E. Haynes, L. A. Boatner, L. C. Feldman, and R. F. Haglund, Jr., Phys. Rev. B 0163-1829 65, 224113 (2002). 10.1103/PhysRevB.65.224113
- (2002) Phys. Rev. B , vol.65 , pp. 224113
- Lopez, R.¹ Haynes, T.E.² Boatner, L.A.³ Feldman, L.C.⁴ Haglund, R.F.⁵

32
- 33845214529
- Phase transition and critical issues in structure-property correlations of vanadium oxide
- DOI 10.1063/1.2384798
- J. Narayan and V. M. Bhosle, J. Appl. Phys. 0021-8979 100, 103524 (2006). 10.1063/1.2384798 (Pubitemid 44853669)
- (2006) Journal of Applied Physics , vol.100 , Issue.10 , pp. 103524
- Narayan, J.¹ Bhosle, V.M.²

33
- 0017382315
- 0028-0836,. 10.1038/267673a0
- A. K. Jonscher, Nature (London) 0028-0836 267, 673 (1977). 10.1038/267673a0
- (1977) Nature (London) , vol.267 , pp. 673
- Jonscher, A.K.¹

34
- 8844287644
- 0028-0836,. 10.1038/277185a0
- K. L. Ngai, A. K. Jonscher, and C. T. White, Nature (London) 0028-0836 277, 185 (1979). 10.1038/277185a0
- (1979) Nature (London) , vol.277 , pp. 185
- Ngai, K.L.¹ Jonscher, A.K.² White, C.T.³

35
- 0032690319
- 0022-3727,. 10.1088/0022-3727/32/14/201
- A. K. Jonscher, J. Phys. D 0022-3727 32, R57 (1999). 10.1088/0022-3727/ 32/14/201
- (1999) J. Phys. D , vol.32 , pp. 57
- Jonscher, A.K.¹

36
- 37649027554
- 12
- DOI 10.1103/PhysRevB.70.144101, 144101
- A. Tselev, C. M. Brooks, S. M. Anlage, H. Zheng, L. Salamanca-Riba, R. Ramesh, and M. A. Subramanian, Phys. Rev. B 0163-1829 70, 144101 (2004). 10.1103/PhysRevB.70.144101 (Pubitemid 40052562)
- (2004) Physical Review B - Condensed Matter and Materials Physics , vol.70 , Issue.14 , pp. 1441011-1441018
- Tselev, A.¹ Brooks, C.M.² Anlage, S.M.³ Zheng, H.⁴ Salamanca-Riba, L.⁵ Ramesh, R.⁶ Subramanian, M.A.⁷

37
- 0031558009
- 0022-3727,. 10.1088/0022-3727/30/11/003
- E. Neagu, P. Pissis, L. Apekis, and J. L. Gomez Ribelles, J. Phys. D 0022-3727 30, 1551 (1997). 10.1088/0022-3727/30/11/003
- (1997) J. Phys. D , vol.30 , pp. 1551
- Neagu, E.¹ Pissis, P.² Apekis, L.³ Gomez Ribelles, J.L.⁴

38
- 0004265916
- (Artech House, Boston, MA).
- A. von Hippel, Dielectrics and Waves (Artech House, Boston, MA, 1995).
- (1995) Dielectrics and Waves
- Von Hippel, A.¹

39
- 0001994375
- 0031-8914,. 10.1016/0031-8914(60)90115-4
- L. K. H. van Beek, Physica (Amsterdam) 0031-8914 26, 66 (1960). 10.1016/0031-8914(60)90115-4
- (1960) Physica (Amsterdam) , vol.26 , pp. 66
- Van Beek, L.K.H.¹

40
- 0037718406
- 0741-3106,. 10.1109/LED.2002.808159
- X. Yu, C. Zhu, H. Hu, A. Chin, M. F. Li, B. J. Cho, D.-L. Kwong, P. D. Foo, and M. B. Yu, IEEE Electron Device Lett. 0741-3106 24, 63 (2003). 10.1109/LED.2002.808159
- (2003) IEEE Electron Device Lett. , vol.24 , pp. 63
- Yu, X.¹ Zhu, C.² Hu, H.³ Chin, A.⁴ Li, M.F.⁵ Cho, B.J.⁶ Kwong, D.-L.⁷ Foo, P.D.⁸ Yu, M.B.⁹

41
- 0035339020
- Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics
- DOI 10.1109/55.919238, PII S0741310601037004
- J. A. Babcock, S. G. Balster, A. Pinto, C. Dirnecker, P. Steinmann, R. Jumpertz, and B. El-Kareh, IEEE Electron Device Lett. 0741-3106 22, 230 (2001). 10.1109/55.919238 (Pubitemid 32486882)
- (2001) IEEE Electron Device Letters , vol.22 , Issue.5 , pp. 230-232
- Babcock, J.A.¹ Balster, S.G.² Pinto, A.³ Dirnecker, C.⁴ Steinmann, P.⁵ Jumpertz, R.⁶ El-Kareh, B.⁷

42
- 0025557348
- Error correction techniques for high-performance differential A/D converters
- DOI 10.1109/4.62175
- K. S. Tan, S. Kiriaki, M. de Wit, J. W. Fattaruso, C. Y. Tsay, W. E. Matthews, and R. K. Hester, IEEE J. Solid-State Circuits 0018-9200 25, 1318 (1990). 10.1109/4.62175 (Pubitemid 21738095)
- (1990) IEEE Journal of Solid-State Circuits , vol.25 , Issue.6 , pp. 1318-1327
- Tan Khen-Sang¹ Kiriaki Sami² De Wit Michiel³ Fattaruso John, W.⁴ Tsay Ching-Yuh⁵ Matthews W.Edward⁶ Hester Richard, K.⁷

43
- 0019698649
- 0018-9200,. 10.1109/JSSC.1981.1051651
- J. L. McCreary, IEEE J. Solid-State Circuits 0018-9200 16, 608 (1981). 10.1109/JSSC.1981.1051651
- (1981) IEEE J. Solid-State Circuits , vol.16 , pp. 608
- McCreary, J.L.¹

44
- 0024172251
- C. Kaya, H. Tigelaar, J. Paterson, M. d. Wit, J. Fattaruso, D. Hester, S. Kiriakai, K. S. Tan, and F. Tsay, IEDM Tech. Dig. 1988, 782.
- IEDM Tech. Dig. , vol.1988 , pp. 782
- Kaya, C.¹ Tigelaar, H.² Paterson, J.³ Wit, M.D.⁴ Fattaruso, J.⁵ Hester, D.⁶ Kiriakai, S.⁷ Tan, K.S.⁸ Tsay, F.⁹

45
- 0035851464
- 0003-6951,. 10.1063/1.1418266
- S. Ramanathan, D. A. Muller, G. D. Wilk, C. M. Park, and P. C. McIntyre, Appl. Phys. Lett. 0003-6951 79, 3311 (2001). 10.1063/1.1418266
- (2001) Appl. Phys. Lett. , vol.79 , pp. 3311
- Ramanathan, S.¹ Muller, D.A.² Wilk, G.D.³ Park, C.M.⁴ McIntyre, P.C.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.