Semiconductor-metal transition characteristics of VO2 thin films grown on c-and r-sapphire substrates

Journal of Applied Physics

Volumn 107, Issue 5, 2010, Pages

  Yang, Tsung Han ^a   Aggarwal, Ravi ^a   Gupta, Alok ^a   Zhou, Honghui ^a   Narayan, Roger J ^b   Narayan, J ^a  

^a North Carolina State University   (United States)

^b UNIVERSITY OF NORTH CAROLINA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC ARRANGEMENT; BULK VALUE; C-SAPPHIRE; COMPARATIVE STUDIES; COMPRESSIVE STRAIN; IN-PLANE ORIENTATION; R-SAPPHIRE; SAPPHIRE SUBSTRATES; SEMICONDUCTOR-METAL TRANSITION; SEMICONDUCTOR-TO-METAL TRANSITIONS; STRUCTURAL DETAILS; THERMAL HYSTERESIS; TRANSITION TEMPERATURE; TWIN BOUNDARIES;

SEMICONDUCTOR GROWTH; SUPERCONDUCTING TRANSITION TEMPERATURE; THIN FILMS;

SAPPHIRE;

EID: 77949770440     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3327241     Document Type: Article

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