Fourier transform infrared spectroscopy characterization of AlN thin films grown on sacrificial silicon oxide layers via metal organic vapor phase epitaxy

Thin Solid Films

Volumn 519, Issue 1, 2010, Pages 117-121

  Kuchibhatla, S ^a   Rodak, L E ^a   Korakakis, D ^a,b  

^a West Virginia University   (United States)

^b NATIONAL ENERGY TECHNOLOGY LABORATORY   (United States)

Author keywords

Air bridges; Aluminum nitride; Fourier transform infrared spectroscopy; Metal organic vapor phase epitaxy; Wet etching

Indexed keywords

AIR-BRIDGES; ALN; ALN FILMS; ALN THIN FILMS; FOURIER TRANSFORM INFRARED; FTIR; INTEGRATED AREAS; LATERAL DIMENSION; MATERIAL PROPERTY; METAL ORGANIC VAPOR PHASE EPITAXY; SI(111) SUBSTRATE; SILICON OXIDE LAYERS; VIBRATIONAL PROPERTIES; WURTZITES;

ALUMINUM; ALUMINUM NITRIDE; EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; HYDROFLUORIC ACID; MATERIALS PROPERTIES; METALS; NITRIDES; ORGANOMETALLICS; OXIDE FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; THIN FILMS; VAPORS; WET ETCHING; ZINC SULFIDE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 77957693098     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.07.076     Document Type: Article

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