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Volumn 3, Issue , 2006, Pages 2274-2277
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Piezoelectric properties of thin AlN layers for MEMS application determined by piezoresponse force microscopy
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Author keywords
[No Author keywords available]
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Indexed keywords
ACCEPTABLE TOLERANCE;
INTERFEROMETRIC TECHNIQUE;
PIEZORESPONSE FORCE MICROSCOPY;
WURTZITE ALN THIN FILMS WERE;
73.61.EY;
77.84.BW;
81.15.CD;
81.15.GH;
INTERFEROMETRIC TECHNIQUES;
INVERSE PIEZOELECTRIC EFFECTS;
POLYCRYSTALLINE THIN FILM;
ALUMINUM NITRIDE;
ATOMIC FORCE MICROSCOPY;
INTERFEROMETRY;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MICROELECTROMECHANICAL DEVICES;
POLYCRYSTALLINE MATERIALS;
SPUTTERING;
FILM PREPARATION;
PIEZOELECTRICITY;
SCANNING PROBE MICROSCOPY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
THIN FILMS;
ZINC SULFIDE;
THIN FILMS;
ALUMINUM NITRIDE;
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EID: 33745500126
PISSN: 18626351
EISSN: None
Source Type: Journal
DOI: 10.1002/pssc.200565123 Document Type: Conference Paper |
Times cited : (29)
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References (12)
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