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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 10, 2003, Pages 6276-6283

Non-planar Selective Area Growth and Characterization of GaN and AlGaN

(6) Heikman, Sten a Keller, Stacia a DenBaars, Steven P a Mishra, Umesh K a Bertram, Frank b Christen, Jürgen b

a University of California (United States)

b OTTO VON GUERICKE UNIVERSITY (Germany)

Author keywords

AIN; Autodoping; Cathodoluminescence (CL); GaN; Impurity Incorporation; MOCVD; Non planar; Selective area growth (SAG); SiO2

Indexed keywords

CATHODOLUMINESCENCE; COMPOSITION; DIFFUSION; DOPING (ADDITIVES); ETCHING; IMPURITIES; MASKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSCOPIC EXAMINATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICA;

SELECTIVE AREA GROWTH (SAG); TRANSMISSION LINE MODEL (TLM);

GALLIUM NITRIDE;

EID: 0346329766 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.6276 Document Type: Article

Times cited : (24)

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